패터닝 예비

목차

1. Title
2. Summary
3. Experimental objective
4. Experimental details
5. Theoretical background
6. References

본문내용

1. Title
Patterning and treatment of SiO2 thin films

2. Summary
- Pattern the silicon dioxide (SiO2) layer using PR(Photoresist).
- Determine the optimal etch parameters and etching gas, then etch SiO2 layer using – Reactive Ion Etching(RIE)
- Observe the color change of the etched SiO2, measure the thickness of the thin films and observe the patterns of etched films.

3. Experimental objective
Understand the process by which the patterns made by masks are engraved on the thin films, examine the film surface and measure the change in thickness before and after etching.

참고 자료

나상현, 플라즈마 절단의 이론과 실무, 자유자재 출판사, p13, 2010
이동준, 반도체, 금조출판사, p42~p45, p110~p111, p117~p138, 1987
한국공업화학회, 무기공업화학, 청문각, p187, p217~p224, 2013
오혜근, 100nm광 리소그래피 기술, 한국광학회, 광학과 기술 2(1), 1998
유순재, 반도체 공학, 북스힐, p127~p128, 2010