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PECVD 공정

P lasma E nhanced C hemical V apor D eposition PECVDOutline Plasma - history mean - application CVD - review - type feature PECVD - mean feature - applicationPlasma Present to develop DC discharge to develop Arc discharge “ radiant matter” plasma is a gas in which a certain portion of the particles are ionized PR ashing Thin film fabricationApplication Fusion power - Magnetic fusion energy (MFE) - Inertial fusion energy (IFE) (also Inertial confinement fusion - ICF) - Plasma-based weaponry Ion implantation Ion thruster Plasma ashing Plasma CVD Plasma etching Plasma arc waste disposal Plasma acceleration DentistryCVD (Chemical vapor deposition) REVIEW Film deposition by initiating a chemical reaction inside a chamber filled with reagents vaporized in an inert carrier gas Energy supplied by the surroundings causes the diffused reagents to react thus forming the desired material film across the target surfaceCVD Kinetic Reaction gas and reaction products of the free energy difference shoueactor (simply CVD, atmospheric pressure CVD) : elevated temperature but at near atmospheric pressures (10 5 Pa) Advantages: - High throughput Good uniformity - Handle large wafers Disadvantages: - Fast gas flows - Needs frequently cleaningLPCVD reactor (low pressure CVD) : utilizes vacuum ( 10 Pa) to increase deposition rate and uniformity Advantages: - Excellent uniformity - Large load size - Hold large wafers Disadvantages: - Low deposition rates - Toxic, corrosive or flammable gasesPECVD reactor ( Plasma Ehanced CVD) : enhancing the reactions and permitting very low deposition temperatures 50 kHz ∼ 13.56 MHz power source No RF bias Vacuum: 0.5~1 torr 0.02-0.1 W/cm 2 power densityPECVD ( Plasma Ehanced Chemical Vapor Deposition) Mean : Plasma-enhanced chemical vapor deposition (PECVD) is a process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting rate sits directly on heated electrode Gas injected into process chamber via “showerhead” gas inlet in the top electrodeWHY PECVD ? Encourage deposition at much lower temperatures and pressures than would be required for thermal CVD. To use plasma deposition is that surfaces exposed to a plasma are subject to bombardment by energetic ions Increasing ion bombardment tends to make films denser and cause the film stress to become more compressive The ability to adjust stress, through changes in process conditions, chamber geometry, or excitation The ability to easily clean the reactor.Disadvantages Limited capacity Individual wafer loading Easily contaminated Toxic byproducts High cost of equipment sPECVD Source Type - Plasma generation and deposition occur simultaneously in one place - the wafer substrate is not directly in the plasma discharge region. Removing the wafer from the plasma region allows processing temperatures down to room temperature. Plasma Plasma Plasma PlasmaPlasmaApplive structures and dielectric Layer as silicon dioxide and silicon nitride filmSilicon Oxide Film Electrical properties of compound semiconductors unintentional hydrogen passivation or alternation of surface fermi levels For oxide deposition, silane SiH 4 and laughing gas N 2 O are used: can be deposited from dichlorosilane or silane and oxygen, typically at pressures from a few hundred millitorr to a few torr . 3 SiH 4 + 6 N 2 O → 3 SiO 2 + 4 NH 3 + 4 N 2 (200- 400 o C) , RF, 0.1 - 5 torr - widely used to create a nearly hydrogen-free film with good conformality over complex surfaces, the latter resulting from intense ion bombardment and consequent sputtering of the deposited molecules from vertical onto horizontal surfaces- can be contaminated with significant carbon and hydrogen as silanol , and can be unstable in air. Pressures of a few torr and small electrode spacings , and/or dual frequency deposition, are helpful to achieve high deposition rates with good film stability. PE SiH a Si(OC 2 H 5 ) 4 → SiO 2 + decomposition productsSilicon Nitride Film - a popular insulating layer in silicon-based electronics , formed from silane and ammonia or nitrogen having high strength over a broad temperature range, moderate thermal conductivity, low coefficient of thermal expansion ability to withstand high structural loads to high temperature, and superior wear resistance. SiH 4 + NH 3 → SiN + 7/2 H 2 ( 400C o )Ratio of (DCS or) silane and NH3 Temperature Plasma parameter • Poor adhesion – change or lengthen surface pre-clean Step • Surface interactions – deposit SiN x at 300 o C on InP to avoid rough/lumpy films or use NH 3 -free SiN x • Particles - if seen as silica dust in showerhead pattern on wafers then need to search for air leaks in gas lines or behind showerhead - if random scattering of particles check chamber/showerhead condition – may need plasma cleaning or sandblasting clean • Pinholes – particles drop on sample then hop off. Common problem TensionThe PECVD iw}

공학/기술| 2018.06.15| 24페이지| 3,000원| 조회(180)

반도체공정, PECVD, PECVD 공정

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