DMAB첨가량에 따른 연성회로기판을 위한 무전해 Ni 도금박막에 관한 연구 (DMAB Effects in Electroless Ni Plating for Flexible Printed Circuit Board)

서지정보

· 발행기관 : 한국재료학회
· 수록지 정보 : 한국재료학회지 / 24권 / 11호 / 632 ~ 638페이지
· 저자명 : 김형철, 나사균, 이연승

초록

We investigated the effects of DMAB (Borane dimethylamine complex, C2H10BN) in electroless Ni-B film withaddition of DMAB as reducing agent for electroless Ni plating. The electroless Ni-B films were formed by electroless platingof near neutral pH (pH 6.5 and pH 7) at 50 oC. The electroless plated Ni-B films were coated on screen printed Ag pattern/PET (polyethylene terephthalate). According to the increase of DMAB (from 0 to 1 mole), the deposition rate and the grainsize of electroless Ni-B film increased and the boron (B) content also increased. In crystallinity of electroless Ni-B films, anamorphization reaction was enhanced in the formation of Ni-B film with an increasing content of DMAB; the Ni-B film with< 1 B at.% had a weak fcc structure with a nano crystalline size, and the Ni-B films with > 5 B at.% had an amorphousstructure. In addition, the Ni-B film was selectively grown on the printed Ag paste layer without damage to the PET surface.
From this result, we concluded that formation of electroless Ni-B film is possible by a neutral process (~green process) at alow temperature of 50 oC.

영어초록

We investigated the effects of DMAB (Borane dimethylamine complex, C2H10BN) in electroless Ni-B film withaddition of DMAB as reducing agent for electroless Ni plating. The electroless Ni-B films were formed by electroless platingof near neutral pH (pH 6.5 and pH 7) at 50 oC. The electroless plated Ni-B films were coated on screen printed Ag pattern/PET (polyethylene terephthalate). According to the increase of DMAB (from 0 to 1 mole), the deposition rate and the grainsize of electroless Ni-B film increased and the boron (B) content also increased. In crystallinity of electroless Ni-B films, anamorphization reaction was enhanced in the formation of Ni-B film with an increasing content of DMAB; the Ni-B film with< 1 B at.% had a weak fcc structure with a nano crystalline size, and the Ni-B films with > 5 B at.% had an amorphousstructure. In addition, the Ni-B film was selectively grown on the printed Ag paste layer without damage to the PET surface.
From this result, we concluded that formation of electroless Ni-B film is possible by a neutral process (~green process) at alow temperature of 50 oC.

참고자료

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