[물리전자2] 과제2 단원 요약 Fabrication of pn junctions

소개

Solid State Electronic Devices By Ben Streetman & Sanjay Banerjee Seventh Edition (2016)
책을 기반으로 한 광운대학교 물리전자2 수업의 두번째 과제입니다.

5단원의 Fabrication of p-n junctions요약과제입니다.
해당 과제물들과 함께 A+를 받은 자료입니다.

목차

1. Thermal Oxidation
2. Diffusion
3. Rapid Thermal Processing
4. Ion Implantation
5. Chemical Vapor Deposition (CVD)
6. hotolithography
7. Stepper
8. Lmin&DOF
9. Chemical Mechanical Polishing (CMP)
10. Plasmas
11. Etching
12. Metallization
13. Identification of source of data

본문내용

Thermal oxidation is a process used to create an oxide layer on a wafer. This oxide layer serves various purposes, including masking, device isolation, gated oxide formation, surface passivation, and as a dielectric material. The process of thermal oxidation for silicon involves heating the wafer to a high temperature. During oxidation, oxygen that reaches the silicon surface can combine with the silicon, resulting in a chemical reaction at the silicon surface. Due to differences in the reaction, there are two methods to achieve thermal oxidation: wet oxidation and dry oxidation.

참고자료

· Richard C. jaeger, “Introduction to microelectronic fabrication 2nd edition”