AlN 버퍼층위에 증착된 다결정 3C-SiC 박막의 라만 산란 특성 (Raman Scattering Characteristics of Polycrystalline 3C-SiC Thin Films deposited on AlN Buffer Layer)

서지정보

· 발행기관 : 한국전기전자재료학회
· 수록지 정보 : 전기전자재료학회논문지 / 21권 / 6호 / 493 ~ 498페이지
· 저자명 : 정귀상, 김강산

초록

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+H₂). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than (C/Si ≈ 3) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at 1180 °C on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.

영어초록

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+H₂). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than (C/Si ≈ 3) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at 1180 °C on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.

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