Eye safety 라이다 센서용 황화납 양자점 기반 SWIR photodetector 개발 (Shortwave Infrared Photodetector based on PbS Quantum Dots for Eye-Safety Lidar Sensors)

서지정보

· 발행기관 : 한국센서학회
· 수록지 정보 : 센서학회지 / 32권 / 5호 / 285 ~ 289페이지
· 저자명 : 최수지, 권진범, 하윤태, 정대웅

초록

Recently, the demand for lidar systems for autonomous driving is increasing, and research on Shortwave Infrared(SWIR)photodetectors for this purpose is being actively conducted. Most SWIR photodetectors currently being developed are basedon InGaAs, and have the disadvantages of complex processes, high prices, and limitations in research due to monopoly. In addition,current SWIR photodetectors use lasers in the 905 nm wavelength band, which can pass through the pupil and cause damageto the retina. Therefore, it is required to develop a SWIR photodetector using a wavelength band of 1400 nm or more tobe safe for human eyes, and to develop a material that can replace the proprietary InGaAs. PbS QDs are group 4-6 compoundsemiconductors whose absorption wavelength band can be adjusted from 1000 to 2700 nm, and have the advantage of beingsimple to process. Therefore, in this study, PbS QDs having an absorption wavelength peak of 1415 nm were synthesized, anda SWIR photodetector was fabricated using this. In addition, the photodetector's responsivity was improved by applying P3HTand ZnO NPs to improve electron hole mobility. As a result of the experiment, it was confirmed that the synthesized PbS QDshad excellent FWHM characteristics compared to commercial PbS QDs, and it was confirmed that the photodetector had a maximumcurrent change of about 1.6 times.

영어초록

Recently, the demand for lidar systems for autonomous driving is increasing, and research on Shortwave Infrared(SWIR)photodetectors for this purpose is being actively conducted. Most SWIR photodetectors currently being developed are basedon InGaAs, and have the disadvantages of complex processes, high prices, and limitations in research due to monopoly. In addition,current SWIR photodetectors use lasers in the 905 nm wavelength band, which can pass through the pupil and cause damageto the retina. Therefore, it is required to develop a SWIR photodetector using a wavelength band of 1400 nm or more tobe safe for human eyes, and to develop a material that can replace the proprietary InGaAs. PbS QDs are group 4-6 compoundsemiconductors whose absorption wavelength band can be adjusted from 1000 to 2700 nm, and have the advantage of beingsimple to process. Therefore, in this study, PbS QDs having an absorption wavelength peak of 1415 nm were synthesized, anda SWIR photodetector was fabricated using this. In addition, the photodetector's responsivity was improved by applying P3HTand ZnO NPs to improve electron hole mobility. As a result of the experiment, it was confirmed that the synthesized PbS QDshad excellent FWHM characteristics compared to commercial PbS QDs, and it was confirmed that the photodetector had a maximumcurrent change of about 1.6 times.

참고자료

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