디스플레이 구동 칩 접합을 위한 시안화물이 포함되지 않은 Au 범프 공정 조건이 계면 반응 및 기계적 신뢰성에 미치는 영향 (Effects of Au Bump Process Condition on the Interfacial Reaction and Mechanical Reliability of Non-cyanide Au Bump for Display Driver IC Bonding)

서지정보

· 발행기관 : 대한금속·재료학회
· 수록지 정보 : 대한금속·재료학회지 / 62권 / 9호 / 726 ~ 734페이지
· 저자명 : 김혜진, 김가희, 고용호, 백철민, 박주현, 박영배

초록

The effects of annealing temperature and thermal cycle conditions on the adhesion characteristics ofnon-cyanide Si/sputter TiW/sputter Au/Au bump structure were systematically investigated using a shear test.
No intermetallic compound was observed at the TiW/Au interface at all annealing temperatures, and voidsformed between the TiW and Au bump interface at a temperature higher than 280 oC. In addition, the Au grainsin the non-annealed and 250 oC specimens formed columnar grains, while equiaxed grains formed attemperatures higher than 280 oC. The measured shear strength of the non-annealed specimen was 44.58±3.60MPa and it increased to 127.48±3.76 MPa at 250 oC. However, the shear strength decreased to 101.27±3.95 MPaat 280 oC and remained constant until 320 oC. The toughness also dramatically increased at 250 oC, thendecreased at 280 oC, and remained constant until 320 oC. It is believed that the shear strength and toughnesswere increased because the inter-diffusion of the Au bump and the sputtered Au at 250 °C led to the formationof a single layer, causing delamination within the Au bump. However, the decrease in shear strength andtoughness during annealing at 280 oC is believed to be due to the formation of voids between the sputtered TiWand Au bump, leading to delamination at the sputtered TiW/Au bump interface. Additionally, the shear strengthof the specimen annealed at 250 °C was observed to remain at approximately 100 MPa even after 1000 cyclesin the thermal cycling test, which is believed to be due to the absence of changes in the Au-grain structure

영어초록

The effects of annealing temperature and thermal cycle conditions on the adhesion characteristics ofnon-cyanide Si/sputter TiW/sputter Au/Au bump structure were systematically investigated using a shear test.
No intermetallic compound was observed at the TiW/Au interface at all annealing temperatures, and voidsformed between the TiW and Au bump interface at a temperature higher than 280 oC. In addition, the Au grainsin the non-annealed and 250 oC specimens formed columnar grains, while equiaxed grains formed attemperatures higher than 280 oC. The measured shear strength of the non-annealed specimen was 44.58±3.60MPa and it increased to 127.48±3.76 MPa at 250 oC. However, the shear strength decreased to 101.27±3.95 MPaat 280 oC and remained constant until 320 oC. The toughness also dramatically increased at 250 oC, thendecreased at 280 oC, and remained constant until 320 oC. It is believed that the shear strength and toughnesswere increased because the inter-diffusion of the Au bump and the sputtered Au at 250 °C led to the formationof a single layer, causing delamination within the Au bump. However, the decrease in shear strength andtoughness during annealing at 280 oC is believed to be due to the formation of voids between the sputtered TiWand Au bump, leading to delamination at the sputtered TiW/Au bump interface. Additionally, the shear strengthof the specimen annealed at 250 °C was observed to remain at approximately 100 MPa even after 1000 cyclesin the thermal cycling test, which is believed to be due to the absence of changes in the Au-grain structure

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