저진공 축전 결합형 BCl3/N2 플라즈마를 이용한 GaAs의 건식 식각 (Capacitively Coupled Dry Etching of GaAs in BCl3/N2 Discharges at Low Vacuum Pressure)

서지정보

· 발행기관 : 한국재료학회
· 수록지 정보 : 한국재료학회지 / 19권 / 3호 / 132 ~ 136페이지
· 저자명 : 김재권, 이성현, 노호섭, 주영우, 박연현, 김태진, 박주홍, 이제원

초록

This study investigates GaAs dry etching in capacitively coupled BCl3/N2 plasma at a low vacuum pressure (>100mTorr). The applied etch process parameters were a RIE chuck power ranging from 100~200 W on the electrodes and a N2 composition ranging from 0~100% in BCl3/N2 plasma mixtures. After the etch process, the etch rates, RMS roughness and etch selectivity of the GaAs over a photoresist was investigated. Surface profilometry and field emission-scanning electron microscopy were used to analyze the etch characteristics of the GaAs substrate. It was found that the highest etch rate of GaAs was 0.4㎛/min at a 20% N2 composition in BCl3/N2 (i.e., 16sccm BCl3/4sccm N2). It was also noted that the etch rate of GaAs was 0.22㎛/min at 20 sccm BCl3 (100% BCl3). Therefore, there was a clear catalytic effect of N2 during the BCl3/N2 plasma etching process. The RMS roughness of GaAs after etching was very low (~3nm) when the percentage of N2 was 20%. However, the surface roughness became rougher with higher percentages of N2.

영어초록

This study investigates GaAs dry etching in capacitively coupled BCl3/N2 plasma at a low vacuum pressure (>100mTorr). The applied etch process parameters were a RIE chuck power ranging from 100~200 W on the electrodes and a N2 composition ranging from 0~100% in BCl3/N2 plasma mixtures. After the etch process, the etch rates, RMS roughness and etch selectivity of the GaAs over a photoresist was investigated. Surface profilometry and field emission-scanning electron microscopy were used to analyze the etch characteristics of the GaAs substrate. It was found that the highest etch rate of GaAs was 0.4㎛/min at a 20% N2 composition in BCl3/N2 (i.e., 16sccm BCl3/4sccm N2). It was also noted that the etch rate of GaAs was 0.22㎛/min at 20 sccm BCl3 (100% BCl3). Therefore, there was a clear catalytic effect of N2 during the BCl3/N2 plasma etching process. The RMS roughness of GaAs after etching was very low (~3nm) when the percentage of N2 was 20%. However, the surface roughness became rougher with higher percentages of N2.

참고자료

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