원통형 타겟 타입 Pulsed DC Magnetron Sputtering에서 두께 변화에 따른 Al-doped ZnO 박막의 특성 변화 (Thickness Dependent Properties of Al-doped ZnO Film Prepared by Using the Pulsed DC Magnetron Sputtering with Cylindrical Target)

서지정보

· 발행기관 : 한국재료학회
· 수록지 정보 : 한국재료학회지 / 20권 / 1호 / 47 ~ 50페이지
· 저자명 : 신범기, 이태일, 박강일, 안경준, 명재민

초록

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, 4.13 × 10-4 Ω·cm-1, was found in 750 nm films with an electron mobility (μ) of 10.6 cm2V-1 s-1 and a carrierconcentration (n) of 1.42 × 1021 cm-3.

영어초록

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, 4.13 × 10-4 Ω·cm-1, was found in 750 nm films with an electron mobility (μ) of 10.6 cm2V-1 s-1 and a carrierconcentration (n) of 1.42 × 1021 cm-3.

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