성균관대학교 고급반도체특강 Homework 3

소개

"성균관대학교 고급반도체특강 Homework 3"에 대한 내용입니다.

목차

(1) The conductance method is one of the most sensitive methods to determine the density of interface traps (Dit). This measurement is normally performed on MIS (metal-insulator-semiconductor) capacitor structures
(2) Dit can be reduced by performing FGA (forming gas annealing). AC frequency-dependent CV curves of MIS sample are shown in below figure. Sketch the expected CV curves after FGA process. Also explain how you arrived at your answer.

본문내용

(1-1) The simplified equivalent circuit of MIS capacitors are given in below figure, representing the interfacial trap states as a series connection of a capacitance Cit and a resistance Rit. Derive expressions for a parallel connection of a capacitance CP and a conductance GP using ω=2πf, Cit=q2Dit, τit=RitCit.

Cox is the oxide capacitance per unit area, Cs is the silicon capacitance per unit area, Rit and Cit are the resistance and capacitance components per unit area related to interface trap. Cp and Gp are the equivalent parallel capacitance and conductance per unit area. The reason why it’s charged like that can be expressed that Gp has only interface trap information not including Cs when the circuit in converted.

참고자료

· M. Wu, Y. Wu, C. Chao, C. Lin and C. Wu, "Crystalline ZrTiO4-Gated Ge Metal–Oxide–Semiconductor Devices With Amorphous Yb2 O3 as a Passivation Layer," in IEEE Transactions on Nanotechnology, vol. 12, no. 6, pp. 1018-1021, Nov. 2013. doi: 10.1109/TNANO.2013.2283252
· N.P. Maity, R.R. Thakur, Reshmi Maity, R.K. Thapa, S. Baishya, “Interface Charge Density Measurement for Ultra Thin ZrO2 Material Based MOS Devices Using Conductance Method,”, Procedia Computer Science, Volume 57, 2015, Pages 761-765, ISSN 1877-0509, https://doi.org/10.1016/j.procs.2015.07.472.
· Maity, Niladri Pratap, et al. “Comparison of Different High-K Dielectric Materials in MOS Device from C-V Characteristics.” Advanced Materials Research, vol. 816–817, Trans Tech Publications, Sept. 2013, pp. 60–64. Crossref, doi:10.4028/www.scientific.net/amr.816-817.60.