반도체 Dry Etching

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1. Dry Etching

Dry Etching은 고에너지 상태의 가스를 이용하여 반도체 회로의 패턴을 구현하는 건식식각 기술입니다. 이 기술은 이방성 및 등방성 식각을 동시에 가능하게 하여 고종횡비 회로 구현 및 미세한 패턴 조각에 필수적입니다. Dry Etching은 습식식각에 비해 고종횡비로 회로 패턴 구현이 가능하고 미세 패턴 조각에 유리하며 고밀도 3D 회로에 필수적인 이방성 식각을 구현할 수 있습니다.
2. Cryogenic Etch

극저온 Etching은 Passivation Gas 생성으로 인한 식각률 저하 문제와 Depth Loading Effect 문제를 해결하기 위해 도입되었습니다. 극저온 Etching은 이온 에너지를 높이고 탄소계열 Passivation Gas를 추가하여 선택비 감소와 Hard Mask Etching 문제를 해결할 수 있습니다.
3. Pulsed plasma

Pulsed plasma 기술은 기존 Continuous wave RF mode의 문제점을 해결할 수 있습니다. Pulsed plasma는 전자 온도와 플라즈마 밀도를 독립적으로 제어할 수 있어 낮은 기판 damage, 높은 선택성/균일성, 이방성 등의 장점이 있습니다. 또한 펄스 주파수로 밀도와 전자 온도를 따로 제어할 수 있어 shading effect, notching, bowing, damage current 등의 문제를 해결할 수 있습니다.
4. Atomic Layer Etching

Atomic Layer Etching(ALE)는 원자층 단위로 식각을 진행하는 공정법으로, RIE 기술의 균일성, 선택비, 표면 거칠기 문제점을 보완할 수 있습니다. ALE는 Dose, Purge, Ion Bombardment, Purge의 4단계로 이루어지며 낮은 생산량이 단점으로 지적되고 있습니다.
5. Etching 동향

Etching 기술은 고정밀도와 고선택성을 위해 EUV 리소그래피 기술과 결합되고 있습니다. 또한 RIE, DRIE 등 드라이 etching 기술이 혁신되어 높은 종횡비 구조의 etching이 가능해졌습니다. 더불어 친환경 etching 공정과 etching과 세척 일체화 기술 등이 개발되고 있습니다.

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1. Dry Etching

Dry etching is a critical process in semiconductor manufacturing, enabling the precise patterning and shaping of features on wafers. It involves the use of plasma or reactive gases to selectively remove material from the surface, allowing for the creation of complex and intricate structures. The advantages of dry etching over wet etching include better anisotropy, higher aspect ratios, and the ability to etch a wider range of materials. However, the process requires careful control of parameters such as gas composition, pressure, and power to achieve the desired results. Ongoing research in this area focuses on improving etch selectivity, reducing damage, and increasing throughput, all of which are essential for the continued advancement of semiconductor technology.
2. Cryogenic Etch

Cryogenic etching is a specialized dry etching technique that utilizes extremely low temperatures, typically below -100°C, to enhance the etching process. At these low temperatures, the chemical reactions involved in the etching process are significantly altered, leading to improved etch selectivity, reduced surface damage, and the ability to etch materials that are otherwise difficult to etch. The cryogenic environment also helps to suppress undesirable side reactions and improves the anisotropy of the etched features. This technique is particularly useful for etching high-aspect-ratio structures, as well as for processing materials that are sensitive to heat or plasma-induced damage. However, the implementation of cryogenic etching systems requires careful engineering and temperature control, which can add complexity and cost to the manufacturing process. Ongoing research in this area aims to further optimize the cryogenic etching process and expand its applications in the semiconductor industry.
3. Pulsed plasma

Pulsed plasma etching is an advanced dry etching technique that utilizes a time-varying plasma to improve the etching process. By applying the plasma in a pulsed manner, rather than continuously, the technique can offer several advantages over traditional continuous plasma etching. These include enhanced etch selectivity, reduced surface damage, and improved control over the etching profile. The pulsed nature of the plasma allows for better control over the energy and flux of the reactive species, enabling more precise etching and the ability to etch materials that are otherwise difficult to process. Additionally, the pulsed approach can help to mitigate issues such as charging and microloading, which can be problematic in continuous plasma etching. Ongoing research in this area focuses on optimizing the pulsed plasma parameters, such as the duty cycle and frequency, to further improve the etching performance and expand the range of applications for this technology.
4. Atomic Layer Etching

Atomic Layer Etching (ALE) is an emerging dry etching technique that offers unprecedented control over the etching process at the atomic scale. Unlike traditional etching methods, ALE relies on a cyclic, self-limiting process that allows for the removal of material one atomic layer at a time. This level of precision enables the fabrication of features with extremely high aspect ratios, as well as the ability to etch materials that are challenging to process using conventional etching techniques. The key advantages of ALE include improved etch selectivity, reduced surface damage, and the ability to achieve atomic-scale control over the etching process. However, the implementation of ALE systems can be complex, requiring careful control of various parameters such as precursor gases, plasma conditions, and temperature. Ongoing research in this area focuses on expanding the range of materials that can be etched using ALE, improving the throughput and scalability of the process, and integrating ALE into existing semiconductor manufacturing workflows.

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