Al2O3 절연체 두께에 따른 MOS Capacitor의 전기적 특성 분석

소개글

Al2O3 절연체 두께에 따른 MOS Capacitor의 전기적 특성을
I-V와 C-V 의 관계를 통해 분석한 자료입니다.
총 24 slide로 구성되어 있으며 영어로 작성되었습니다.

목차

1. 실험목적
2. 실험과정
3. 결과분석
4. 결론
5. 참고문헌

본문내용

Purpose of the Experiment
Understanding the principle and characteristics of the MOS Capacitor
C-V, I-V analysis in accordance with the thickness of the Al2O3 insulator
Insulator thickness (6nm, 12nm, 18nm)

Experimental Background
MOS Capacitor
MOS Capacitor structure
MOS Capacitor principle

<중 략>

1. I-V Results Analysis
Negative Voltage applied
Break down tendency
Current increase section
current at thickness 12nm > currents at thickness 6nm and 18nm

Guess cause of the error
(1) Breakdown voltage
(2) Skin effect : Depending humidity or the shape of the surface, there is a large variation
(3) No annealing process
(4) It is dependent on the surronding conditions such as humidity and surface internal temperature

<이하생략>

참고 자료

William D. Callister Jr. "Fundamentals of Materials Science and Engineering"
S. O. Kasap, 홍릉출판사, 전자재료물성 및 소자공학
Sentil, 전자재료과학 print
염근영 교수님, icampus normative reference
Physics of Metal-Oxide-Semiconductor (MOS) Structures (Part 1), Thomas Schroder, IHP – Microelectronics
이후정교수님 ‘반도체공학개론’ 강의자료
http://www.docstoc.com/docs/21091153/E-beam-Evaporator-Manual