유연한 유기태양전지의 수분 투습 방지를 위해 원자층 증착법으로 제조된 Al2O3 박막에 대한 연구 (Study on the Atomic Layer Deposition of Al2O3 Thin Film as Moisture Barrier Layer for High Efficiency Flexible Organic Solar Cell)

서지정보

· 발행기관 : 한국섬유공학회
· 수록지 정보 : 한국섬유공학회지 / 57권 / 6호 / 393 ~ 399페이지
· 저자명 : 이봄, 임주현, 권도윤, 오영택, 김시몬, 신진용, 임회연, 이수언, 김승희, 김봉훈

초록

A moisture barrier layer with high density and uniformity is essential forincreasing the lifespan of optoelectronic devices such as flexible organic solar cells, LEDs,and photodetectors. In this study, various surface pre-treatments (O2 plasma, UVOtreatment, Al seed layer, and thermal annealing process) were performed on a polyethylenenaphthalate (PEN) film to form a functional group of chemical adsorption with the atomiclayer deposition (ALD) precursor. We investigated the effect of the surface pre-treatment ofa PEN substrate for a deposition of Al2O3 thin film in terms of the deposition uniformity andwater vapor transmittance rate (WVTR). For example, the root mean square roughness ofthe bare PEN film/Al2O3 was RRMS=3.26 nm, whereas the O2 plasma treated PEN film/Al2O3had RRMS=0.99 nm because of the presence of a functional group. As a result, WVTR of barePEN film/Al2O3 was 0.83 g/m²/day, whereas that of O2 plasma treated PEN film/Al2O3decreased to 0.38 g/m²/day.

영어초록

A moisture barrier layer with high density and uniformity is essential forincreasing the lifespan of optoelectronic devices such as flexible organic solar cells, LEDs,and photodetectors. In this study, various surface pre-treatments (O2 plasma, UVOtreatment, Al seed layer, and thermal annealing process) were performed on a polyethylenenaphthalate (PEN) film to form a functional group of chemical adsorption with the atomiclayer deposition (ALD) precursor. We investigated the effect of the surface pre-treatment ofa PEN substrate for a deposition of Al2O3 thin film in terms of the deposition uniformity andwater vapor transmittance rate (WVTR). For example, the root mean square roughness ofthe bare PEN film/Al2O3 was RRMS=3.26 nm, whereas the O2 plasma treated PEN film/Al2O3had RRMS=0.99 nm because of the presence of a functional group. As a result, WVTR of barePEN film/Al2O3 was 0.83 g/m²/day, whereas that of O2 plasma treated PEN film/Al2O3decreased to 0.38 g/m²/day.

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