금속염화물 전구체용액을 이용한 태양전지용 CIS/CIGS계 광흡수층의 제조와 특성 (Synthesis and Characterization of the CIS/CIGS Absorber Layer of Solar Cell using Metal Chloride Precursor Solution)

서지정보

· 발행기관 : 대한금속·재료학회
· 수록지 정보 : 대한금속·재료학회지 / 51권 / 11호 / 835 ~ 842페이지
· 저자명 : 이유국, 이동구

초록

Cu(In,Ga)Se2 (CIS/CIGS) absorber films were economically synthesized using metal chloride (CuCl2, InCl3, GaCl3, and SeCl₄) precursors in acetone solution with no addition of organic binders for doctor bladed deposition. Heat treatment was applied to CIS/CIGS precursors from 100 to 500 ℃ and the crystallinity and surface morphologies were investigated by FESEM, XRD, etc. It was observed that CIS crystals began to form at 300 ℃ and as the metal chloride concentration in the precursor solution became higher and the heat treatment temperature increased, then the CIS crystal size grew larger and the crystallinity was better. In addition, with the substitution of Ga for In, the (112) main peak in the CIS absorber layer shifted to a higher angle due to a decrease in the lattice parameter and its energy band gap increased. The best quality CIS film was obtained from a CIS concentration of 0.4 M / 0.4 M / 0.8 M with heat treatment of 500 ℃ for 30 minutes.

영어초록

Cu(In,Ga)Se2 (CIS/CIGS) absorber films were economically synthesized using metal chloride (CuCl2, InCl3, GaCl3, and SeCl₄) precursors in acetone solution with no addition of organic binders for doctor bladed deposition. Heat treatment was applied to CIS/CIGS precursors from 100 to 500 ℃ and the crystallinity and surface morphologies were investigated by FESEM, XRD, etc. It was observed that CIS crystals began to form at 300 ℃ and as the metal chloride concentration in the precursor solution became higher and the heat treatment temperature increased, then the CIS crystal size grew larger and the crystallinity was better. In addition, with the substitution of Ga for In, the (112) main peak in the CIS absorber layer shifted to a higher angle due to a decrease in the lattice parameter and its energy band gap increased. The best quality CIS film was obtained from a CIS concentration of 0.4 M / 0.4 M / 0.8 M with heat treatment of 500 ℃ for 30 minutes.

참고자료

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