페로브스카이트 태양전지 효율향상을 위한 NiOx 홀 수송층의 역할과 설계 전략 (Role and Design Strategies of NiOx Hole Transport Layers in High Performance Perovskite Solar Cells)

서지정보

· 발행기관 : 한국태양광발전학회
· 수록지 정보 : Current Photovoltaic Research / 13권 / 2호 / 61 ~ 76페이지
· 저자명 : 장재원, 김재연, 구본기, 고민재

초록

Perovskite solar cells (PSCs) have emerged as one of the most promising photovoltaic technologies, achieving power conversion efficiencies (PCEs) exceeding 26%. Among the materials used in PSCs, nickel oxide (NiOx) has become a key component for hole transport layers (HTLs) in p-i-n structured devices due to its chemical stability, suitable p-type characteristics, wide optical bandgap, and cost-effectiveness. These properties make NiOx essential for efficient charge transport, reduced recombination losses, and enhanced device stability. Recent research has focused on improving the morphology, crystallinity, and photovoltaic performance of NiOx thin films through advanced fabrication techniques such as sol-gel processing, chemical precipitation, sputtering, and pulsed laser deposition. Interface engineering strategies have also been explored to optimize energy band alignment and mitigate recombination at the NiOx/perovskite interface. Despite these advancements, challenges such as scalability and long-term operational stability remain significant barriers to commercialization. This review critically examines recent progress in NiOx-based HTLs, addressing both technical advancements and persistent challenges. By providing insights into the structural and photovoltaic properties of NiOx, this study aims to support the development of scalable, high-performance PSCs and contribute to their integration as sustainable energy solutions.

영어초록

Perovskite solar cells (PSCs) have emerged as one of the most promising photovoltaic technologies, achieving power conversion efficiencies (PCEs) exceeding 26%. Among the materials used in PSCs, nickel oxide (NiOx) has become a key component for hole transport layers (HTLs) in p-i-n structured devices due to its chemical stability, suitable p-type characteristics, wide optical bandgap, and cost-effectiveness. These properties make NiOx essential for efficient charge transport, reduced recombination losses, and enhanced device stability. Recent research has focused on improving the morphology, crystallinity, and photovoltaic performance of NiOx thin films through advanced fabrication techniques such as sol-gel processing, chemical precipitation, sputtering, and pulsed laser deposition. Interface engineering strategies have also been explored to optimize energy band alignment and mitigate recombination at the NiOx/perovskite interface. Despite these advancements, challenges such as scalability and long-term operational stability remain significant barriers to commercialization. This review critically examines recent progress in NiOx-based HTLs, addressing both technical advancements and persistent challenges. By providing insights into the structural and photovoltaic properties of NiOx, this study aims to support the development of scalable, high-performance PSCs and contribute to their integration as sustainable energy solutions.

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