양극산화 시간 및 전류밀도 변화에 따른 다공질 실리콘의 특성 변화 (Effects of Current Density and Anodization Time on the Properties of Porous Si)

서지정보

· 발행기관 : 한국표면공학회
· 수록지 정보 : 한국표면공학회지 / 43권 / 3호 / 121 ~ 126페이지
· 저자명 : 최현영, 김민수, 김군식, 조민영, 전수민, 임광국, 이동률, 김진수, 김종수, 임재영

초록

The PS(porous Si) were fabricated with different anodization time and current density. The structural and optical properties of PS were investigated by SEM(scanning electron microscopy), AFM(atomic force microscopy), and PL(photoluminescence). It is found that the pore size and surface roughness of PS are proportional to the current density. The PL spectra show that the PL peak position is red-shifted with increasing anodization time. This behavior corresponds to the change of pore size which is consistent with the quantum confinement model. The FWHM(full width at half maximum) of PL peak is decreased from 97 to 51 nm and the PL peak position is blue-shifted with increasing current density up to 10 mA/cm2. The PL peak intensity of the PS fabricated under 1 mA/cm2 is the highest among samples.

영어초록

The PS(porous Si) were fabricated with different anodization time and current density. The structural and optical properties of PS were investigated by SEM(scanning electron microscopy), AFM(atomic force microscopy), and PL(photoluminescence). It is found that the pore size and surface roughness of PS are proportional to the current density. The PL spectra show that the PL peak position is red-shifted with increasing anodization time. This behavior corresponds to the change of pore size which is consistent with the quantum confinement model. The FWHM(full width at half maximum) of PL peak is decreased from 97 to 51 nm and the PL peak position is blue-shifted with increasing current density up to 10 mA/cm2. The PL peak intensity of the PS fabricated under 1 mA/cm2 is the highest among samples.

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