AgNWs/Ga-doped ZnO 복합전극 적용 CdSe양자점 기반 투명발광소자 (CdSe quantum dot based transparent light-emitting device using silver nanowire/Ga-doped ZnO composite electrode)

서지정보

· 발행기관 : 한국반도체디스플레이기술학회
· 수록지 정보 : 반도체디스플레이기술학회지 / 19권 / 4호 / 6 ~ 10페이지
· 저자명 : 박재홍, 김효준, 강현우, 김종수, 정용석

초록

The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 µm and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/m2 and 41.54 mA/cm2 at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/m2 and 2.05 mA/cm2 at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.

영어초록

The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 µm and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/m2 and 41.54 mA/cm2 at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/m2 and 2.05 mA/cm2 at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.

참고자료

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