SiGe에 이온 주입과 열처리에 의한 불순물 분포의 연구 (A Study of Dopant Distribution in SiGe Using Ion Implantation and Thermal Annealing)

서지정보

· 발행기관 : 한국전기전자재료학회
· 수록지 정보 : 전기전자재료학회논문지 / 31권 / 6호 / 377 ~ 385페이지
· 저자명 : 정원채

초록

For the investigation of dopant profiles in implanted Si1-xGex, the implanted B and As profiles are measuredusing SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in Si1-xGex arediscussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are alsoanalyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show8% deviations of Rp and 1.8% deviations of ΔRp owing to relatively small lattice strain and relaxation on the samplesurface. In comparison with the SIMS data, the simulation results show 4.7% deviations of Rp and 8.1% deviations ofΔRp in the arsenic implanted Si0.2Ge0.8 layer and 8.5% deviations of Rp and 38% deviations of ΔRp in the Si0.5Ge0.5layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental andsimulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor)and HBT (heterojunction bipolar transistor), the study of dopant profiles in the Si1-xGex layer becomes more importantfor accurate device scaling and fabrication technologies.

영어초록

For the investigation of dopant profiles in implanted Si1-xGex, the implanted B and As profiles are measuredusing SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in Si1-xGex arediscussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are alsoanalyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show8% deviations of Rp and 1.8% deviations of ΔRp owing to relatively small lattice strain and relaxation on the samplesurface. In comparison with the SIMS data, the simulation results show 4.7% deviations of Rp and 8.1% deviations ofΔRp in the arsenic implanted Si0.2Ge0.8 layer and 8.5% deviations of Rp and 38% deviations of ΔRp in the Si0.5Ge0.5layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental andsimulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor)and HBT (heterojunction bipolar transistor), the study of dopant profiles in the Si1-xGex layer becomes more importantfor accurate device scaling and fabrication technologies.

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