DC 마그네트론 스퍼터링 방법에 의해 증착된 Mo 박막의 특성 (Characteristics of Mo Thin Films Deposited by DC Magnetron Sputtering)

서지정보

· 발행기관 : 한국화학공학회
· 수록지 정보 : Korean Chemical Engineering Research(HWAHAK KONGHAK) / 49권 / 2호 / 195 ~ 199페이지
· 저자명 : 공선미, 정지원, 소우빈, 김은호

초록

DC 마그네트론 스퍼터링 방법을 이용하여 soda lime glass 위에 Mo 박막을 증착하였다. DC power와 증착 압력을변화시키면서 상온에서 Mo 박막을 증착하였고 증착된 박막의 전기적 성질 및 구조적 성질을 조사하였다. DC power가 증가할수록 박막의 증착속도는 증가되었고 전기 저항도는 감소하였으며 박막의 결정성이 향상되는 것을 관찰할 수있었다. 증착 압력이 감소할수록 박막의 증착속도와 전기 저항도가 감소하였으며 가늘고 긴 모양의 결정입자가 조밀하게 박막을 형성하였다. 압력이 증가함에 따라서 결정입자는 원형으로 변형되었으며 박막의 표면에 공극의 생성이 증가하였다. Mo 박막의 전기 저항도는 Mo 원자에 결합된 산소의 양이 많아질수록 증가하게 되고, 박막의 결정성이 높아지면 산소의 결합도가 감소하여 낮은 저항도를 갖게 되는 것을 확인하였다.

영어초록

Mo thin films were deposited on soda lime glass at room temperature by using DC magnetron sputtering.
The electrical and structural properties of the films were investigated by varying DC power and gas pressure as the deposition parameter. As DC power increased, the deposition rate of Mo films was increased and the electrical resistivity was decreased. It was observable that the crystallinity of the films was improved with increasing DC power. As gas pressure decreased, the deposition rate and resistivity of the films were decreased, and long rectangular grains were densely formed. With increasing gas pressure, the grains were transformed to a round shape and the voids on the film surface were increased. It was confirmed that the electrical resistivity of Mo films was increased as the amount of oxygen combined with Mo atoms increased. It was also disclosed that the films have low resistivity as the degree of coupling of oxygen with Mo was reduced due to the enhancement of the crystallinity of the films.

참고자료

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