결정질 실리콘 태양전지의 패시베이션 적용을 위한 Al2O3/SiON 적층구조의 열적 안정성에 대한 연구 (A Study on the Thermal Stability of an Al2O3/SiON Stack Structure for c-Si Solar Cell Passivation Application)

서지정보

· 발행기관 : 한국세라믹학회
· 수록지 정보 : 한국세라믹학회지 / 51권 / 3호 / 197 ~ 200페이지
· 저자명 : 조국현, 장효식

초록

We investigated the influence of blistering on Al2O3/SiON stacks and Al2O3/SiNx:H stacks passivation layers. Al2O3 film providesoutstanding Si surface passivation quality. Al2O3 film as the rear passivation layer of a p-type Si solar cell is usually stacked with acapping layer, such as SiO2, SiNx, and SiON films. These capping layers protect the thin Al2O3 layer from an Al electrode during theannealing process. We compared Al2O3/SiON stacks and Al2O3/SiNx:H stacks through surface morphology and minority carrierlifetime after annealing processes at 450oC and 850oC. As a result, the Al2O3/SiON stacks were observed to produce less blisterphenomenon than Al2O3/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositingSiNx film, the rich H species in NH3 source are diffused to the Al2O3 film. On the other hand, less hydrogen diffusion occurs in SiONfilm as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently,the Al2O3/SiON stacks had a higher minority carrier lifetime than the Al2O3/SiNx:H stacks.

영어초록

We investigated the influence of blistering on Al2O3/SiON stacks and Al2O3/SiNx:H stacks passivation layers. Al2O3 film providesoutstanding Si surface passivation quality. Al2O3 film as the rear passivation layer of a p-type Si solar cell is usually stacked with acapping layer, such as SiO2, SiNx, and SiON films. These capping layers protect the thin Al2O3 layer from an Al electrode during theannealing process. We compared Al2O3/SiON stacks and Al2O3/SiNx:H stacks through surface morphology and minority carrierlifetime after annealing processes at 450oC and 850oC. As a result, the Al2O3/SiON stacks were observed to produce less blisterphenomenon than Al2O3/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositingSiNx film, the rich H species in NH3 source are diffused to the Al2O3 film. On the other hand, less hydrogen diffusion occurs in SiONfilm as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently,the Al2O3/SiON stacks had a higher minority carrier lifetime than the Al2O3/SiNx:H stacks.

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