홀측정을 이용한 ZTO 반도체 박막계면에서의 터널링 효과 (The Tunneling Effect at Semiconductor Interfaces by Hall Measurement)

서지정보

· 발행기관 : 한국재료학회
· 수록지 정보 : 한국재료학회지 / 29권 / 7호 / 408 ~ 411페이지
· 저자명 : 오데레사

초록

ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at 150 °C. The capacitance decreases at 200 °C. ZTO heat treated at 150 °C shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.

영어초록

ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at 150 °C. The capacitance decreases at 200 °C. ZTO heat treated at 150 °C shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.

참고자료

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