유연한 디스플레이 소자의 보호막용 직접 패턴 형성이 가능한 POSS계저유전 물질의 제조 (Directly Patternable Low-k Materials for Flexible Displays with POSS as the Passivation Layer)

서지정보

· 발행기관 : 한국섬유공학회
· 수록지 정보 : 한국섬유공학회지 / 52권 / 6호 / 438 ~ 443페이지
· 저자명 : 임희은, 고소연, 곽영제

초록

The passivation layer, which is located between a pixel electrode and a data electrode, must provide sufficiently low parasitic capacitance and sufficient electrical insulation to reduce cross talk and signal distortion. The present demand for passivation materials for next-generation displays has created interest in substitutes with low dielectric constant, high transmittance, thermal stability, and patternability; these requirements cannot be met by the silicon nitride layer and silicon dioxide used currently. To meet these requirements, negative-tone patterning systems containing polyhedral oligomeric silsesquioxane (POSS) were developed by adopting two different approaches: use of POSS in the polymeric matrix and in the crosslinker. The polymeric matrix, poly(methacryl isobutyl POSS-rhydroxy styrene), showed improved dielectric property and thermal stability. However, the POSS content was limited owing to poor solubility. A POSS crosslinker with epoxy functional groups was used along with phenol group containing polymeric matrices; poly(4- hydroxy styrene). It was possible to pattern the POSS crosslinker system by irradiating it with UV light and subjecting it to subsequent thermal treatment. With increasing POSS content, the crosslinked materials showed increased transparency, higher thermal stability, and lower dielectric constant. The system could also be patterned by irradiating it with UV through a patterned mask.

영어초록

The passivation layer, which is located between a pixel electrode and a data electrode, must provide sufficiently low parasitic capacitance and sufficient electrical insulation to reduce cross talk and signal distortion. The present demand for passivation materials for next-generation displays has created interest in substitutes with low dielectric constant, high transmittance, thermal stability, and patternability; these requirements cannot be met by the silicon nitride layer and silicon dioxide used currently. To meet these requirements, negative-tone patterning systems containing polyhedral oligomeric silsesquioxane (POSS) were developed by adopting two different approaches: use of POSS in the polymeric matrix and in the crosslinker. The polymeric matrix, poly(methacryl isobutyl POSS-rhydroxy styrene), showed improved dielectric property and thermal stability. However, the POSS content was limited owing to poor solubility. A POSS crosslinker with epoxy functional groups was used along with phenol group containing polymeric matrices; poly(4- hydroxy styrene). It was possible to pattern the POSS crosslinker system by irradiating it with UV light and subjecting it to subsequent thermal treatment. With increasing POSS content, the crosslinked materials showed increased transparency, higher thermal stability, and lower dielectric constant. The system could also be patterned by irradiating it with UV through a patterned mask.

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