비정질 실리콘 희생층을 이용한 니켈산화막 볼로미터 제작 (Fabrication of Nickel Oxide Film Microbolometer Using Amorphous Silicon Sacrificial Layer)

서지정보

· 발행기관 : 한국센서학회
· 수록지 정보 : 센서학회지 / 24권 / 6호 / 379 ~ 384페이지
· 저자명 : 김지현, 방진배, 이정희, 이용수

초록

An infrared image sensor is a core device in a thermal imaging system. The fabrication method of a focal plane array (FPA) is a key technology for a high resolution infrared image sensor. Each pixels in the FPA have Si3N4/SiO2 membranes including legs to deposit bolometric materials and electrodes on Si readout circuits (ROIC). Instead of polyimide used to form a sacrificial layer, the feasibility of an amorphous silicon (α-Si) was verified experimentally in a 8×8 micro-bolometer array with a 50 μm pitch. The elimination of the polyimide sacrificial layer hardened by a following plasma assisted deposition process is sometimes far from perfect, and thus requires longer plasma ashing times leading to the deformation of the membrane and leg. Since the amorphous Si could be removed in XeF2 gas at room temperature, however, the fabricated micro-bolomertic structure was not damaged seriously. A radio frequency (RF) sputtered nickel oxide film was grown on a Si3N4/SiO2 membrane fabricated using a low stress silicon nitride (LSSiN) technology with a LPCVD system. The deformation of the membrane was effectively reduced by a combining the α-Si and LSSiN process for a nickel oxide micro-bolometer.

영어초록

An infrared image sensor is a core device in a thermal imaging system. The fabrication method of a focal plane array (FPA) is a key technology for a high resolution infrared image sensor. Each pixels in the FPA have Si3N4/SiO2 membranes including legs to deposit bolometric materials and electrodes on Si readout circuits (ROIC). Instead of polyimide used to form a sacrificial layer, the feasibility of an amorphous silicon (α-Si) was verified experimentally in a 8×8 micro-bolometer array with a 50 μm pitch. The elimination of the polyimide sacrificial layer hardened by a following plasma assisted deposition process is sometimes far from perfect, and thus requires longer plasma ashing times leading to the deformation of the membrane and leg. Since the amorphous Si could be removed in XeF2 gas at room temperature, however, the fabricated micro-bolomertic structure was not damaged seriously. A radio frequency (RF) sputtered nickel oxide film was grown on a Si3N4/SiO2 membrane fabricated using a low stress silicon nitride (LSSiN) technology with a LPCVD system. The deformation of the membrane was effectively reduced by a combining the α-Si and LSSiN process for a nickel oxide micro-bolometer.

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