결정질 실리콘 태양전지 적용을 위한 HWCVD SiNx 막 연구 (SiNx film deposited by hot wire chemical vapor deposition method for crystalline silicon solar cells)

서지정보

· 발행기관 : 한국반도체디스플레이기술학회
· 수록지 정보 : 반도체디스플레이기술학회지 / 13권 / 3호 / 27 ~ 33페이지
· 저자명 : 김하영, 서화일, 박민경, 김민영, 최정호, 노시철

초록

To develop high efficiency crystalline solar cells, the SiNx film for surface passivation and anti-reflection coating is very important and it is generally deposited by PECVD. In this paper, the SiNx film deposited by Hot-Wire chemical vapor deposition(HWCVD) that has no plasma damage was studied. First, to optimize the SiNx film deposition process, SiH4 gas rate and substrate temperature were varied and then refractive index and thickness were measured. When SiH4 gas rate was 22sccm and substrate temperature was 100℃, refractive index was 1.94 and higher than that of other process conditions. Second, the lifetime was measured by varying the annealing temperature and time. The annealing process was made from 5 to 30 minutes at 300~500℃. When the annealing temperature was 100℃ and time was 10minute, the lifetime was the highest. The lifetime of annealed samples was also measured after the firing process at 975℃. Although the lifetime of all samples was decreased by firing process, the lifetime of annealed samples before the firing process was higher than that of fired samples only. Finally, the characteristics of solar cells with HWCVD SiNx film were measured.

영어초록

To develop high efficiency crystalline solar cells, the SiNx film for surface passivation and anti-reflection coating is very important and it is generally deposited by PECVD. In this paper, the SiNx film deposited by Hot-Wire chemical vapor deposition(HWCVD) that has no plasma damage was studied. First, to optimize the SiNx film deposition process, SiH4 gas rate and substrate temperature were varied and then refractive index and thickness were measured. When SiH4 gas rate was 22sccm and substrate temperature was 100℃, refractive index was 1.94 and higher than that of other process conditions. Second, the lifetime was measured by varying the annealing temperature and time. The annealing process was made from 5 to 30 minutes at 300~500℃. When the annealing temperature was 100℃ and time was 10minute, the lifetime was the highest. The lifetime of annealed samples was also measured after the firing process at 975℃. Although the lifetime of all samples was decreased by firing process, the lifetime of annealed samples before the firing process was higher than that of fired samples only. Finally, the characteristics of solar cells with HWCVD SiNx film were measured.

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