이중 주파수 전원의 용량성 결합 플라즈마 식각장비에서 전극하전에 의한 입사이온 에너지분포 변화연구 (Electrode Charging Effect on Ion Energy Distribution of Dual-Frequency Driven Capacitively Coupled Plasma Etcher)

서지정보

· 발행기관 : 한국반도체디스플레이기술학회
· 수록지 정보 : 반도체디스플레이기술학회지 / 13권 / 3호 / 39 ~ 43페이지
· 저자명 : 최명선, 김곤호, 장윤창, 이석환

초록

The effect of electrode charging on the ion energy distribution (IED) was investigated in the dual-frequency capacitively coupled plasma source which was powered of 100MHz RF at the top electrode and 400 kHz bias on the bottom electrode. The charging property was analyzed with the distortion of the measured current and voltage waveforms. The capacitance and the resistance of electrode sheath can change the property of ion and electron charging on the electrode so it is sensitive to the plasma density which is controlled by the main power. The ion energy distribution was estimated by equivalent circuit model, being compared with the measured distribution obtained from the ion energy analyzer. Results show that the low frequency bias power changes effectively the low energy population of ion in the energy distribution.

영어초록

The effect of electrode charging on the ion energy distribution (IED) was investigated in the dual-frequency capacitively coupled plasma source which was powered of 100MHz RF at the top electrode and 400 kHz bias on the bottom electrode. The charging property was analyzed with the distortion of the measured current and voltage waveforms. The capacitance and the resistance of electrode sheath can change the property of ion and electron charging on the electrode so it is sensitive to the plasma density which is controlled by the main power. The ion energy distribution was estimated by equivalent circuit model, being compared with the measured distribution obtained from the ion energy analyzer. Results show that the low frequency bias power changes effectively the low energy population of ion in the energy distribution.

참고자료

· 없음