병렬 플라즈마 소스를 이용한 마이크로 LED 소자 제작용 GaN 식각 공정 시스템 개발 (GaN Etch Process System using Parallel Plasma Source for Micro LED Chip Fabrication)

서지정보

· 발행기관 : 한국반도체디스플레이기술학회
· 수록지 정보 : 반도체디스플레이기술학회지 / 20권 / 3호 / 32 ~ 38페이지
· 저자명 : 손보성, 공대영, 이영웅, 김희진, 박시현

초록

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (μ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl3/Cl2 gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 μm and the etch angle over 75 and also with no etching residue was obtained for the μ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP.
The μ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method

영어초록

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (μ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl3/Cl2 gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 μm and the etch angle over 75 and also with no etching residue was obtained for the μ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP.
The μ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method

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