극저온 전자 온도 플라즈마 소스를 활용한 SiO2/SiNX ALE 공정 개발 연구

서지정보

· 발행기관 : 한국반도체디스플레이기술학회
· 수록지 정보 : 반도체디스플레이기술학회지 / 23권 / 4호 / 123 ~ 129페이지
· 저자명 : 신태호, 김가은, 온범수, 유은성, 권지운, 이승민, 정승익

초록

The semiconductor industry continues to reduce the critical dimension of transistors to achieve high-performance semiconductor devices, and it has now entered the atomic-scale era, beyond the nanoscale. Among the various methods for semiconductor miniaturization, self-aligned contact etching is one of the approaches introduced to improve alignment margins during the photolithography process. This paper presents detailed research conducted by the Semiconductor Division of ICD Co., Ltd., focusing on ultra-low electron temperature plasma source technology. The study aims to lower the electron temperature of the plasma and find optimal process conditions that can prevent damage to SiNx thin films. The study aims to explore the unique characteristics of this plasma source and demonstrate how it can be leveraged to enhance the state-of-the-art capabilities of the self-aligned contact process. The findings suggest that optimizing the process conditions can significantly improve etching performance, contributing to the advancement of semiconductor fabrication technologies.

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