강유전체 Hf0.5Zr0.5O2 박막의 퍼니스 어닐링 효과 연구 (Furnace Annealing Effect on Ferroelectric Hf0.5Zr0.5O2 Thin Films)

서지정보

· 발행기관 : 한국전기전자재료학회
· 수록지 정보 : 전기전자재료학회논문지 / 36권 / 1호 / 88 ~ 92페이지
· 저자명 : 조민관, 유정규, 박혜련, 강종묵, 공태호, 정용찬, 김지영, 김시준

초록

The ferroelectricity in Hf0.5Zr0.5O2 (HZO) thin films is one of the most interesting topics for next-generation nonvolatile memory applications. It is known that a crystallization process is required at a temperature of 400°C or higher to form an orthorhombic phase that results in the ferroelectric properties of the HZO film. However, to realize the integration of ferroelectric HZO films in the back-end-of-line, it is necessary to reduce the annealing temperature below 400°C. This study aims to comprehensively analyze the ferroelectric properties according to the annealing temperature (350-500°C) and time (1-5 h) using a furnace as a crystallization method for HZO films. As a result, the ferroelectric behaviors of the HZO films were achieved at a temperature of 400°C or higher regardless of the annealing time. At the annealing temperature of 350°C, the ferroelectric properties appeared only when the annealing time was sufficiently increased (4 h or more). Based on these results, it was experimentally confirmed that the optimization of the annealing temperature and time is very important for the ferroelectric phase crystallization of HZO films and the improvement of their ferroelectric properties.

영어초록

The ferroelectricity in Hf0.5Zr0.5O2 (HZO) thin films is one of the most interesting topics for next-generation nonvolatile memory applications. It is known that a crystallization process is required at a temperature of 400°C or higher to form an orthorhombic phase that results in the ferroelectric properties of the HZO film. However, to realize the integration of ferroelectric HZO films in the back-end-of-line, it is necessary to reduce the annealing temperature below 400°C. This study aims to comprehensively analyze the ferroelectric properties according to the annealing temperature (350-500°C) and time (1-5 h) using a furnace as a crystallization method for HZO films. As a result, the ferroelectric behaviors of the HZO films were achieved at a temperature of 400°C or higher regardless of the annealing time. At the annealing temperature of 350°C, the ferroelectric properties appeared only when the annealing time was sufficiently increased (4 h or more). Based on these results, it was experimentally confirmed that the optimization of the annealing temperature and time is very important for the ferroelectric phase crystallization of HZO films and the improvement of their ferroelectric properties.

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