Nanoelectronics: Tunneling current in DNA–Single electron transistor

서지정보

· 발행기관 : 한국물리학회
· 수록지 정보 : Current Applied Physics / 9권 / 11호 / 149 ~ 152페이지
· 저자명 : Rakesh K. Gupta, Vipul Saraf

초록

Modern silicon-integrated circuit technology has been undoubtedly increasing computing speed every 18
to 24 months according to Moor’s prediction and further, reduction in feature dimensions is not possible
without various quantum problems. Despite the fabrication of the molecular junctions (acting as quantum
dots), and a CNT field-effect transistor, it is very difficult to connect a single molecule to external
leads, thus preventing verification of this idea until recently. Individual molecules can perform functions
identical to those of the key components of present day microcircuits. Molecular engineering extends its
potential application to manufacture electronic devices at nano scale with much more sophisticated
advantages over the modern day microelectronics. The reason behind forming molecular electronics
may be that the society at large has a demand for smaller, faster, simpler and better technologies. Bioelectronics
is one of the areas of interest that overlaps with biotechnology and includes DNA electronics
and cellular computing. Electronic circuit components using single molecules have been proposed since
1974. DNA-based electronic components such as single electron transistors are also being proposed and
realized. In this paper, we present the possible tunneling current under different external biasing conditions.
DNA–SET model is based on tunneling properties of P-bonds (as tunneling junctions in coulomb
blockade regime) in sugar–phosphate backbones of single-strand DNA molecules.

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