Thermal Oxidation -Furnace

소개

Furnace를 이용한 열산화법에 대한 자료입니다.
Thermal Oxidation 증착에 관한 자료입니다.
세미나를 위해 직접 만든 자료입니다.
많은 도움이 될 수 있을 것입니다.

목차

1. Type of Oxidation
2. Classification of Oxidation - Temperature
3. Classification of Oxidation - Method
4. Function of Oxide Layers
5. principal of Si02 Growth
6. Oxidation principal
7. Application as a function of thickness
8. Characteristics OF Oxidation Thickness
9. Oxide Growth Mechanism
10. Definition of Thermal Oxidation
11. Thermal oxidation
12. Dry Thermal Oxidation
13. Wet Thermal Oxidation
14. Thermal Oxidation Process
15. Factor as a function of Oxide thickness
16.Oxide thickness as a function of time
17. Si Oxidation System
18. Bubbler System
19. Wet Thermal Oxidation Techniques
20.Summary

본문내용

1. Type of Oxidation
oxidation산화막형성은실리콘집적회로제작에서가장기본적이며자주사용되는공정
반도체소자에서매우우수한절연체(insulator)로전류와도핑물질(dopant)의이동을막는데사용

2. Classification of Oxidation - Temperature
T < 200 ℃ : anodization : ethylene glycol + KNO3vacuum deposition : SiO2, Si + O2sputtering : 용융석영이음극표적재료로사용plasma deposition
250 ℃ < T < 600 ℃: SiH4
~400 ℃ SiO2for Passivation
doped SiO2 by B2H6 , PH3
•600 ℃ < T < 900 ℃ :TEOS (tetra-ethylorthosilicate) SiH4orSiCl4+CO2
•900 ℃ < T < 1200 ℃ : Thermal Oxidation
Dry and Wet or Cl incorporated Oxidation

3. Classification of Oxidation - Method
Dry Oxidation
•수증기를이용산화막증착
•높은성장률
•온도: ~1100℃ 에서짂행
•산화막두께: ~1.2μm
•두꺼운두께의산화막제조시
•O2이용산화막증착
•낮은성장률
•온도: ~1100℃ 에서짂행
•산화막두께: ~0.1μm
•낮은두께의산화막제조시
•MOSFET, HBT, HEMT 등의소자에서Gate Oxide로사용

참고자료

· •Introduction to Microelectronic Fabrication -Richard C. Jaeger
· •반도체공정기술-황호정
· •Thermal Oxidation-경북대학교공성호
· •Microelectronics processing course-J.Salzman –Fall 2006