성균관대학교 고급반도체특강 Homework 2

소개

"성균관대학교 고급반도체특강 Homework 2"에 대한 내용입니다.

목차

(1) As shown in the below schematic diagram, TLM (Transfer Length Method or Transmission Line Method) is one of the method to measure a contact resistance between metal and semiconductor. Derive both contact and sheet resistance by using parameters in the below schematic diagram (L1 < L2 < L3 < L4).
(2) Explain a CTLM* method by using schematic diagrams (including CTLM pattern), graphs, and equations. (*CTLM: Circular Transfer Length Method or Circular Transmission Line Method)
(3) Typically, a contact resistance would have units of Ω-cm2 or Ω-cm. To solve the below two questions, search relating literatures.

본문내용

(1) As shown in the below schematic diagram, TLM (Transfer Length Method or Transmission Line Method) is one of the method to measure a contact resistance between metal and semiconductor. Derive both contact and sheet resistance by using parameters in the below schematic diagram (L1 < L2 < L3 < L4).

Consider the simple resistor geometry is shown at above in cross section. The measured total resistance consists of several components:

where  is the resistance due to the contact metal,  is associated with the metal/semiconductor interface, and  is the usualsemiconductor resistance. The resistance of a single contact would be   . However, in most situations, the resistivity of the metal in the contact is so low that  ≫  , ignored.

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