광흡수층 두께에 따른 투광형 비정질 실리콘 박막 태양전지의 양면발전 성능특성 (Impact of Absorber Thickness on Bifacial Performance Characteristics of Semitransparent Amorphous Silicon Thin-Film Solar Cells)

서지정보

· 발행기관 : 한국태양광발전학회
· 수록지 정보 : Current Photovoltaic Research / 7권 / 4호 / 97 ~ 102페이지
· 저자명 : 서영훈, 이아름, 신민정, 조아라, 안승규, 박주형, 유진수, 최보훈, 조준식

초록

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (JSC) from 10.59 mA/cm2 to 14.19 mA/cm2 was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (VOC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the JSC increased from 10.81 to 12.64 mA/cm2 and the FF deceased from 66.63% to 61.85%, while the VOC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.

영어초록

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (JSC) from 10.59 mA/cm2 to 14.19 mA/cm2 was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (VOC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the JSC increased from 10.81 to 12.64 mA/cm2 and the FF deceased from 66.63% to 61.85%, while the VOC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.

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