전자회로실험 A+ 5주차 결과보고서(Bipolar Junction Transistor Characterization)

소개

"전자회로실험 A+ 5주차 결과보고서(Bipolar Junction Transistor Characterization)"에 대한 내용입니다.

목차

1. 실험목표
2. 실험과정
3. 실험결과
4. 실험결과 사진
5. PSPICE 결과
6. PSPICE 사진
7. 분석 및 토의

본문내용

1. 실험목표
The BJT was invented in 1948 by William Shockley at Bell Labs, and became the first massproduced transistor. Having a good grasp of the physics of the BJT is key to understanding its operation and applications. In this lab, we will explore the BJT’s four regions of operation and also determine its characteristic values, such as DC current gain and early voltage. The transistor used in this lab is the 2N3904, an NPN device. It is strongly recommended that you read and understand the section of BJT physics before beginning this experiment.

2. 실험과정
(1) Determining the Region of Operation
1) Set up the circuit shown in figure below.
2) Ramp up VC until measured VCE becomes 5V. Ramp up VB until measured IB becomes desired value. Measure IC, β and record the observation.
3) Plot the characteristic curve (VB - IC). Determine the region of operation of the transistor.
4) Gradually ramp up the value of VB, VC with different value of IB. Measure IC and record your observation.
(2) Determining the operation region and the Early Voltage
1) Plot the characteristic curve (VCE - IC). Determine the region of operation of the transistor. Determine the Early voltage, VA.

참고자료

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