Al0.21Ga0.79As/GaAs의 변조 빔의 세기에 대한 광반사도 특성 연구 (A Study on How the Photoreflectance Characteristic in the Al0.21Ga0.79As/GaAs Heterostructure Affects Variable Pumping Intensity)

서지정보

· 발행기관 : 대한금속·재료학회
· 수록지 정보 : 대한금속·재료학회지 / 55권 / 8호 / 587 ~ 590페이지
· 저자명 : 최경수, 최순돈, 유재인

초록

The photoreflectance (PR) method is advantageous in that it is more convenient to use at low temperature and high temperature than electroreflectance (ER) due to the modulation of the electric field.
This is caused by the recombination of the surface state charge and the minority carriers generated by the laser light. For this reason, PR makes it easier to study the microstructure of semiconductors using non-contact and non-destructive characteristics on the surface of the sample. The position of the Fermi level of the semiconductor can also be determined and the surface electric field can be optically determined. We studied the photoreflectance characteristics of the Al0.21Ga0.79As/GaAs heterostructure. We observed the A region (1.49∼1.53 eV) in the PR spectra by varying the pumping intensity in the sample. The room temperature PR spectra exhibited A region oscillations. This was found to be due to the increasing electric field intensity.

영어초록

The photoreflectance (PR) method is advantageous in that it is more convenient to use at low temperature and high temperature than electroreflectance (ER) due to the modulation of the electric field.
This is caused by the recombination of the surface state charge and the minority carriers generated by the laser light. For this reason, PR makes it easier to study the microstructure of semiconductors using non-contact and non-destructive characteristics on the surface of the sample. The position of the Fermi level of the semiconductor can also be determined and the surface electric field can be optically determined. We studied the photoreflectance characteristics of the Al0.21Ga0.79As/GaAs heterostructure. We observed the A region (1.49∼1.53 eV) in the PR spectra by varying the pumping intensity in the sample. The room temperature PR spectra exhibited A region oscillations. This was found to be due to the increasing electric field intensity.

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