GaAs 기반 In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As 이종접합 구조를 갖는 MHEMT 소자의 DC 특성에 대한 calibration 연구 (Calibration Study on the DC Characteristics of GaAs-based In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As Heterostructure Metamorphic HEMTs)

서지정보

· 발행기관 : 한국반도체디스플레이기술학회
· 수록지 정보 : 반도체디스플레이기술학회지 / 10권 / 1호 / 63 ~ 73페이지
· 저자명 : 손명식

초록

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1㎛ Γ-gate MHEMT device having the modulation-doped In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1㎛ Γ-gate MHEMT device. We expect that our 파라미터 보정 result can help design over-100-GHz MHEMT devices for better device performance.

영어초록

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1㎛ Γ-gate MHEMT device having the modulation-doped In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1㎛ Γ-gate MHEMT device. We expect that our 파라미터 보정 result can help design over-100-GHz MHEMT devices for better device performance.

참고자료

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