비금속 질화물 h-BN, g-C3N4, Si3N4, SiON, P3N5의 합성 및 특성 분석

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1. hexagonal boron nitride (h-BN)

h-BN은 고온, 고압에서 borazine, boron oxide, boric acid 등의 precursor를 사용하여 합성할 수 있다. 합성된 h-BN은 graphite와 유사한 층상 구조를 가지며, XRD, SSNMR 등의 분석을 통해 결정성과 구조를 확인할 수 있다.
2. graphitic carbon nitride (g-C3N4)

g-C3N4는 cyanamide, 2-cyanoguanidine, melamine 등의 precursor를 열처리하여 합성할 수 있다. 합성된 g-C3N4는 층상 구조를 가지며, XRD, UV-Vis, PL 분석을 통해 광학적 특성을 확인할 수 있다. g-C3N4는 가시광 하에서 광촉매 활성을 보여 관심을 받고 있는 물질이다.
3. silicon nitride (Si3N4)

Si3N4는 다양한 방법으로 합성할 수 있는데, 대표적으로 carbothermal reduction, gas-reduction nitridation, CVD 등의 방법이 있다. 합성된 Si3N4는 α상과 β상의 두 가지 결정 구조를 가지며, 강도가 높아 내마모성 부품 등에 활용되고 있다.
4. silicon oxynitride (SiON)

SiON은 PECVD 방법을 통해 박막 형태로 합성할 수 있다. FT-IR 분석을 통해 O-N 결합 형성을 확인할 수 있으며, 발광 특성으로 인해 LED 등의 광학 소자 분야에 응용될 수 있다.
5. phosphorous nitride (P3N5)

P3N5는 주로 hexachlorophosphazene과 암모늄 염화물을 precursor로 사용하여 합성할 수 있다. FT-IR, NMR, XRD 분석을 통해 P-N 결합 형성을 확인할 수 있으며, BN이나 Si3N4와 유사한 hard material 특성을 가질 것으로 예상된다.

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1. hexagonal boron nitride (h-BN)

Hexagonal boron nitride (h-BN) is a fascinating material with unique properties that make it highly valuable in various applications. As a wide-bandgap semiconductor, h-BN exhibits excellent thermal and electrical insulation, high thermal conductivity, and exceptional chemical and thermal stability. These characteristics make it an ideal candidate for use in high-power electronics, heat dissipation devices, and as a protective coating for sensitive components. One of the key advantages of h-BN is its structural similarity to graphene, which allows it to be used as a substrate or encapsulating layer for other two-dimensional materials, such as graphene and transition metal dichalcogenides. This enables the creation of heterostructures with tailored electronic and optical properties, opening up new possibilities for advanced electronic and optoelectronic devices. Furthermore, h-BN's low dielectric constant and high breakdown voltage make it a promising material for high-frequency and high-power applications, such as in radio frequency (RF) devices and power electronics. Its ability to withstand high temperatures and harsh environments also makes it valuable for use in aerospace and nuclear applications. Overall, the unique properties of h-BN, combined with its versatility and potential for integration with other materials, make it a highly promising material for a wide range of technological advancements, from energy-efficient electronics to advanced sensing and communication systems.
2. graphitic carbon nitride (g-C3N4)

Graphitic carbon nitride (g-C3N4) is a fascinating and versatile material that has garnered significant attention in recent years due to its unique properties and potential applications. As a two-dimensional, metal-free, and polymeric semiconductor, g-C3N4 exhibits a range of remarkable characteristics that make it a promising candidate for various technological applications. One of the key advantages of g-C3N4 is its ability to absorb and utilize visible light, making it a highly efficient photocatalyst for a variety of applications, such as water splitting, environmental remediation, and organic synthesis. Its tunable bandgap and excellent chemical stability allow for the design of tailored photocatalytic systems that can effectively harness solar energy for sustainable energy production and environmental protection. Furthermore, g-C3N4 has shown promise in the field of energy storage and conversion, with potential applications in high-performance batteries, supercapacitors, and fuel cells. Its unique structure and electronic properties enable the development of advanced energy storage devices with improved energy density, power density, and cycling stability. Beyond its photocatalytic and energy-related applications, g-C3N4 has also been explored for use in sensors, optoelectronics, and catalysis. Its versatility and ease of synthesis make it an attractive material for the development of cost-effective and scalable technologies in these domains. Overall, the remarkable properties of g-C3N4, combined with its potential for diverse applications, make it a highly promising material for addressing some of the pressing challenges faced by modern society, from sustainable energy production to environmental remediation and beyond.
3. silicon nitride (Si3N4)

Silicon nitride (Si3N4) is a remarkable ceramic material that has garnered significant attention due to its exceptional properties and wide-ranging applications. As a hard, wear-resistant, and thermally stable material, Si3N4 has found widespread use in various industries, from engineering and manufacturing to electronics and energy. One of the key advantages of Si3N4 is its exceptional mechanical properties, including high hardness, strength, and toughness. These characteristics make it an ideal material for use in cutting tools, bearings, and other high-wear applications, where its resistance to abrasion and fracture is crucial. Additionally, Si3N4's thermal stability and low thermal expansion coefficient make it suitable for use in high-temperature environments, such as in engine components and aerospace applications. Beyond its mechanical properties, Si3N4 also exhibits excellent electrical and dielectric properties, making it a valuable material for use in electronic devices and systems. Its high electrical resistivity, low dielectric loss, and high breakdown voltage make it suitable for use as an insulating material in power electronics, high-frequency devices, and microelectronic packaging. Furthermore, Si3N4 has found applications in the field of biomedical engineering, where its biocompatibility and corrosion resistance make it a suitable material for implants and other

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