펜타센 박막의 두께 변화에 따른 상 변화, 모폴로지와 소자의 전기적 특성 (Thickness-Dependent Phase Change and Morphological and Electric Characteristic of Devices with Pentacen)

서지정보

· 발행기관 : 한국물리학회
· 수록지 정보 : 새물리 / 69권 / 12호 / 1231 ~ 1234페이지
· 저자명 : 김두리, Zhirayr Baghdasartan, 이기진

초록

본 연구는 열 증착 방법을 통해 여러 두께의 펜타센 (pentacene)박막을 제작하여 상 변화, 표면 모폴로지(morphology)와 소자의 전기적 특성을 분석하였다. 펜타센 박막이 두꺼워질수록 orthorhombic phase, thin film phase, bulk phase가 차례대로 나타나는 것을 X-ray diffraction 측정 결과로 확인하였다. 또한 상변화에 따른 거칠기를 AFM을 통해서 확인하였다. 펜타센 기반 다이오드를 제작하여 문턱 전압, 이동도를 측정하였다. orthorhombic phase가 우세할 때 다이오드의 문턱 전압과 이동도는 3.14 V, 3.64 10 7 cm2/ V s, thin film phase가 우세할 때는 각각 1.50 V, 5:08 10 5 cm2/ V s였다. bulk phase 가 나타나기 시작할 때는 각각 2.80 V, 6:75 10 5 cm2/V s였다. 이를 통해 특정한 상의 성질을 나타낼때의 전기적 특성을 관측하였다.

영어초록

In this study, pentacene thin films of various thicknesses were fabricated by using the thermal evaporation method, and the phase change, surface morphology and electrical characteristics of these films were analyzed. As the pentacene thin film became thicker, the orthorhombic phase, the thin-film phase, and the bulk phase appeared, in that order, in the measured X-ray diffraction patterns. Also, the roughness was found to change with the phase, as confirmed through atomic force microscopy (AFM). A pentacene-based diode was fabricated, and the threshold voltage and mobility were measured. When the orthorhombic phase was dominant, the diode’s threshold voltage and mobility were 3.14 V and 3.64 10 7 cm2/ V s, respectively, and when the thin-film phase was dominant, those results were 1.50 V and 5:08 10 5 cm2/ V s. When the bulk phase began to appear, the threshold voltage and mobility of the diode were 2.80 V and 6:75 10 5 cm2/V s. In this way, we were able to observe the dependenced of the electrical properties on the properties of the phase.

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