on p-Si(111) were also studied. ... with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films ... In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray
Then, Al thin film was deposited by thermal evaporation. ... been an important issue in the development of thin film solar cells. ... The prepared poly-Si seed layer showed high volume fraction of crystalline Si and<100> orientation
Ag nanoparticles were self-organized from a thin Ag film on a Si substrate through the RTA process. ... The mean diameter of the nanoparticles was modulated by changing the thickness of the Ag film. ... nanoparticles was obtained under H2 gas at RTA, compared to that under Ar, from the same thickness of Ag thin film
Inthis study, n-type SOI-MOSFETs with a channel length of 0.1µm and a Si film thickness (channel depth ... The p-type boron dopingconcentration of the Si film, in which the device channel is formed, was used ... To form functioningtransistors on the very thin Si film, a protective layer of 0.08µm-thick surface oxide
It was indicated that the post carbon coating treatment can reduce Al2O3 film on Al-Si particles, and ... Al-Si/C nanoparticles were obtained by coated Al-Si nanoparticles with the precursor of glucose (C6H12O6 ... Al-Si nanoparticles were prepared by the arc-discharge method.
The resistive switching memory devices made of the Cr-doped SrZrO3 thin films deposited on Si substrates ... For application of the commercial memory device, Cr-doped SrZrO3 perovskite thin films were deposited ... on a SrRuO3 bottom electrode/Si(100)substrate using pulsed laser deposition.
The gas sensing properties were compared with those of zinc oxide thin films deposited on SiO2/Si substrates ... This revealed a porous ZnO-SWNT composite due to the porosity in the SWNT film. ... It showed a response even at room temperature while the film structure did not.
Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by ... FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O ... Annealing of the precursor films led to the compositional change of the two chemicals intosilicon (di
were deposited on SiO2/Si substrates using dc magnetron sputtering. ... Graphene was synthesized on the metal/SiO2/Si substrates with CH4 gas (1 SCCM) diluted in mixed gases ... Graphene films were successfully grown on Ag, Au, and Pt substrates as well.
of and plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat /Si ... Moreover, the saturation condition obtained on the flat /Si substrate resulted in poor step coverage ... Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using and plasma
SU-8은 360nm 이상의 매우 높은 광학적 투명도를 가지고있는데 이는 그것이 매우 두꺼운 film의 수직 측벽 근처에서 imaging에 적합하게 만들기 때문에 SU-8은 imaged ... 실험방법 2.1 사용한 시약 및 기구 Sylgard 184A(PDMS), Sylgard 184B, 4 inch Si wafer, SU-8 developer, DI water, Rhodamine
Glass Mask는 Film Mask에 비하여 Pattern의 미세화가 가능하며, 무엇보다 온도, 습도 변화에 상당히 안정적인 설계 값을 유지 한다. ... 웨이퍼 표면에 HMDS와 같은 Silazane gas 분사를 통하여 Si-O-H 형태의 친수성인 웨이퍼 표면을 소수성으로 바꾸어 주어 웨이퍼와 감광제의 접?력을 향상시킨다.
알루미늄 –전기전도성, 열전도성 굿-표면에 oxide film 형성 => 부식 방지 (이미 부식이 되어있는거)-ductile => 가공성 굿-알루미늄의 기본 컨셉 : 석출경화. ... 내마모,내식,높은강도,높은연성.. but 폭발위험-Al-Cu-Si : Cu 3~8% Si 3~8% , 실리콘 때문에 석출경화 잘 안일어나서 강도, 내마모성 안좋음-Al-Cu-Ni-Mg도 ... -Al-cu : 석출경화 => 강도 up-Al-Si : good for die-cating (실리콘=> 용융성 좋게함 => 다이캐스팅하기 좋음 (녹여서 주물로하는거)-Al-mg :
In this study, four kinds of substrates (Si, glass, Fe, polyimide) with the magnetostrictive thin film ... The deposited film thicknesses are verified using X-ray diffraction. ... TbDyFe films are deposited by DC magnetron sputtering with 1~10m thick.
The film morphology of 100-nm-thick Ni changed to islands on SiO2/Si substrate after heat treatment at ... 900˚C for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. ... Graphene has been synthesized on 100- and 300-nm-thick Ni/SiO2/Si substrates with CH4 gas (1 SCCM) diluted
The reason for this heat treatment is that those specimens have a passive film on the surface. ... In these results, the corrosion resistance of materials depends on the stability of the oxide film formed ... Before testing in boiling sulfuric acid environments, the specimens of Fe-4.5Si, Fe-6Si, Ni-4.5Si, Ni-Ti-Si-Nb
This peak was attributed to annealing induced reordering in the films that led to increased Si-N4 bonding ... silicon rich silicon nitride and Si3N4 layers using an rf magnetron co-sputtering system. ... Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of
thin film transistors. ... Silicon dioxide as gate dielectrics was grown at 400˚C on a polycrystalline Si substrate by inductively ... coupled plasma oxidation using a mixture of O2 and N2O to improve the performance of polycrystalline Si