IGBT 반도체

목차

Presentation Concept
Define & Principle
History & Background Knowledge
Fabrication Process
Advantages of IGBT
Application
Summary
Reference

본문내용

Summary
IGBT was considerably accelerated by the idea of MOS-bipolar combination
IGBT has significant superior characteristics for low and medium frequency applications
IGBT power rating can be improved by incre-asing both current and voltage
Fabrication of IGBT due to the combination of MOS gate structure and bipolar current conduction
The solution of high energy-efficiency is an IGBT

참고 자료

Publication
[1] IGBT. Theory and Design – Vinod Kummar Khanna – Ch.8
[2] Introduction to microelectronic fabrication – Richard C. Jaeger
[3] 반도체 공학 – U. Kawabe, T.Saitoh – page 193~195
[4] 최신 반도체 디바이스 – 이정환, 곽계달 - page 183~186
[5] 직접회로 설계를 위한 반도체 소자 및 공정 – 정항군, 최진영 – page 227~233
[6] 반도체 디바이스, 이론과 프로세스기술 – S.M.Sze – page 506~515
[7] 신편, 반도체회로 – 박기영, 최규훈 – page 260~263
[8] 반도체공학 – 허규성 – page 175-203
Internet site
[9] http://jas2.eng.buffalo.edu/applets/education/fab/BjtFet/index.html
[10] http://fabweb.ece.uiuc.edu/gt/process/
[11] http://www.ami.ac.uk/courses/ami4202_mdesign/u02/index.asp
[12] http://www.mtmi.vu.lt/pfk/funkc_dariniai/transistor/bipolar_transistor.htm
[13] http://www.optics2001.com/Materials/Semiconductors.htm
[14] http://wws2.uncc.edu/tpw/mixsig/