[화학실험]Etching Process(final)
- 최초 등록일
- 2006.02.02
- 최종 저작일
- 2006.02
- 10페이지/ 한컴오피스
- 가격 1,000원
소개글
에칭 프로세스에 대한 레포트입니다
wet 에칭과 dry에칭을 이용한 v-groove제작에 관한 내용이 실려있습니다
좋은 자료이니 많은 이용바랍니다
목차
1. 실험목적··································································· 1
2. 실험방법 및 이론··························································· 1
1)ICP를 이용한 플라즈마 Dry Etching······································ 1
2)Wet Etching 원리 및 V-groove 제작······································ 2
가)Ti Wet Etching
나)V-groove 제작
3. 결과 및 고찰······························································· 6
4. 실험장비··································································· 8
5. 참고자료··································································· 9
본문내용
1.실험목적
Photolithograpy 공정에서 중요한 부분을 차지하는 식각(Etching)공정에 대해서 이해하고, Dry etching과 Wet etching을 각각 실습한다. 그리고 Wet etching 방법을 이용해서 V-groove 를 제작하고, Etching time을 변수로 하여 각각의 Patterning 정도를 분석한다.
2.실험방법 및 이론
1)ICP를 이용한 플라즈마 Dry Etching
ICP를 이용한 플라즈마 Dry Etching은 직접 수행하지는 못하였지만 대략적인 이론은 다음과 같다.
참고 자료
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