안티몬 도핑된 주석 산화물 투명전도막의 몰 농도에 따른 치밀한 표면 구조 제조
(주)코리아스칼라
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- 2023.04.05
- 최종 저작일
- 2018.02
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서지정보
ㆍ발행기관 : 한국분말야금학회
ㆍ수록지정보 : 한국분말야금학회지 / 25권 / 1호
ㆍ저자명 : 배주원, 구본율, 안효진
목차
Abstract
1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
감사의 글
References
영어 초록
Sb-doped SnO2 (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance (12.60±0.21 Ω/□ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value (9.44±0.17 × 10-3 Ω-1). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.
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