반도체 노광 공정의 DI 세정과 Oxide의 HF 식각 과정이 실리콘 표면에 미치는 영향

서지정보

ㆍ발행기관 : 한국재료학회 ㆍ수록지정보 : 한국재료학회지 / 20권 / 8호
ㆍ저자명 : 백정헌, 최선규, 박형호

영어 초록

This study shows the effects of deionized (DI) rinse and oxide HF wet etch processes on silicon substrate during a photolithography process. We found a fail at the wafer center after DI rinse step, called Si pits, during the fabrication of a complementary metal-oxide-semiconductor (CMOS) device. We tried to find out the mechanism of the Si pits by using the silicon wafer on CMOS fabrication and analyzing the effects of the friction charge induced by the DI rinsing. The key parameters of this experiment were revolution per minute (rpm) and time. An incubation time of above 10 sec was observed for the formation of Si pits and the rinsing time was more effective than rpm on the formation of the Si pits. The formation mechanism of the Si pits and optimized rinsing process parameters were investigated by measuring the charging level using a plasma density monitor. The DI rinse could affect the oxide substrate by a friction charging phenomenon on the photolithography process. Si pits were found to be formed on the micro structural defective site on the Si substrate under acceleration by developed and accumulated charges during DI rinsing. The optimum process conditions of DI rinse time and rpm could be established through a systematic study of various rinsing conditions.

참고 자료

없음