Chapter 5. JUNCTIONS

소개글

고체전자공학 pn접합 파트를 그림과 그래피 및 수식으로 정리한것

목차

Chapter 5. JUNCTIONS
1.Transient and A-C Conditions
2.Deviations from the Simple Theory
3.Metal – Semiconductor Junctions
4.Heterojunctions

본문내용

Switching Diodes

It is clear that a diode with fast switching properties must either store very little charge in the neutral regions for steady forward currents, or have a very short carrier lifetime, or both.

Method to improve the switching speed of a diode
By adding efficient recombination centers to the bulk material.
⇒ for Si diodes, Au doping is useful for this purpose.
By making the lightly doped neutral region shorter than a minority carrier diffusion length.
⇒ in this case the stored charge for forward conduction is very small, since most of the injected carriers diffuse through the lightly doped region to the end contact.

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