In-Situ doping during ZnO Atomic _badtags Deposition
- 최초 등록일
- 2011.06.08
- 최종 저작일
- 2010.05
- 11페이지/ MS 파워포인트
- 가격 1,000원
소개글
ALD 공법을 이용한 ZnO박막 층착.
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본문내용
In-Situ doping during ZnO Atomic Layer Deposition
Thin Film Mater Lab
Journal of the Korean Physical Society, Vol. 53, No. 1, July 2008, pp. 253-257
Abstract
Thin Film Mater Lab
Al-doped ZnO films on glass and Si substrate by atomic layer deposition at 200˚C and evaluated the electrical and the optical properties of these films.
Diethylzinc(DEZ) and trimethylaluminum(TMA) were used as metal precursors and water as a reactant.
Al-doped ZnO film with a resistivity of 1.09 X 10-3 Ω·cm, a carrier concentration of 1.16 X 1021 cm-3 and carrier mobility of 5.0 cm2/V·s was attained.
The transmittances of the film in the visible region were in excess of 80%(450 nm ≤ λ ≤1100 nm) and 65%(380 nm ≤ λ ≤450 nm).
Introduction
Thin Film Mater Lab
To use TCOs as transparent electrodes in those devices, a high transmittance (80 %) in the visible region and a low resistivity of ~1 X 10-4 Ω·cm are required.
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