버퍼막 두께에 따른 ZnO/ZnO/p-Si(111) 이종접합 다이오드 특성 평가
(주)코리아스칼라
- 최초 등록일
- 2016.04.02
- 최종 저작일
- 2011.01
- 5페이지/ 어도비 PDF
- 가격 4,000원
* 본 문서는 배포용으로 복사 및 편집이 불가합니다.
서지정보
ㆍ발행기관 : 한국재료학회
ㆍ수록지정보 : 한국재료학회지 / 21권 / 1호
ㆍ저자명 : 허주회, 류혁현, 이종훈
영어 초록
In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at 700˚C for 10 minutes in N2 in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at 700˚C for 30 minutes in N2. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.
참고 자료
없음
"한국재료학회지"의 다른 논문
더보기 (5/10)