폴리 실리콘을 이용한 금속-반도체-금속 광 검출기의 열처리에 따른 전기적 특성

서지정보

ㆍ발행기관 : 한국재료학회 ㆍ수록지정보 : 한국재료학회지 / 28권 / 4호
ㆍ저자명 : 김경민, 김정열, 이유기, 최용선, 이재성, 이영기

목차

Abstract
1. 서 론
2. 실험 방법
3. 결과 및 고찰
3.1 열처리 조건에 따른 광검출기의 전기적 특성
3.2 열처리 조건에 따른 금속간 화합물 생성
3.3 금속간 화합물에 따른 광검출기의 전기적 특성
4. 결 론
Reference

영어 초록

This study investigated the effects of the post annealing temperatures on the electrical and interfacial properties of a metal-semiconductor-metal photodetector(MSM-PD) device. The interdigitate type MSM-PD devices had the structure Al(500 nm) / Ti(200 nm) / poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscope(TEM). Electrical characteristics of the MSM-PD were also examined using current-voltage(I-V) measurements. The optimal post annealing condition for the Schottky contact of MSM-PD devices are 350℃-30minutes. However, as the annealing temperature and time are increased, electrical characteristics of MSM-PD device are degraded. Especially, for the annealing conditions of 400℃-180minutes and 500℃-30minutes, the I-V measurement itself was impossible. These results are closely related to the solid phase reactions at the interface of MSM-PD device, which result in the formation of intermetallic compounds such as Al3Ti and Ti7Al5Si12.

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