플라즈마분자선에피탁시법으로 성장한 산화비스무스아연 박막의 구조특성

서지정보

ㆍ발행기관 : 한국재료학회 ㆍ수록지정보 : 한국재료학회지 / 21권 / 10호
ㆍ저자명 : 임동석, 신은정, 임세환, 한석규, 이효성, 홍순구, 정명호, 이정용, 조형균

영어 초록

We report the structural characterization of BixZn1-xO thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, BixZn1-xO thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure α-Bi2O3 or the tetragonal structure β-Bi2O3 by means of XRD θ-2θ measurements, as the observed diffraction peaks of the 2θ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure α-Bi2O3 at 28.064 and the reflection of the (201) plane for the tetragonal structure β-Bi2O3 at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure α-Bi2O3 phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite BixZn1-xO thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of α-Bi2O3. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the α-Bi2O3 phase in the wurtzite (Bi)ZnO matrix.

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