MOScapacitor 제작 및 특성 분석
- 최초 등록일
- 2008.11.27
- 최종 저작일
- 2008.11
- 7페이지/
한컴오피스
- 가격 1,500원
소개글
직접 MOScapaictor를 제작하여, 이에 제작과정과, 기본적인 MOS-capacitor의 동작원리를 설명하였습니다. 또한, 제작 후, C-V curve및 I-V curve를 측정하여 이를 분석하였습니다. 이 레포트는 영문으로 쓰여졌습니다.
목차
1. Purpose of Experiment
2. Introduction of MOS capacitor
3. Experiment & Result
Procedure of Fabrication
Procedure of Measurement
Result and Discussion
4. Conclusion
Reference
본문내용
1. Purpose of Experiment
The principle of operation could be obtained by fabricating MOS capacitor. Also, we analyze and discuss by measuring C-V and I-V characteristics and understand the electrical properties of MOS capacitor.
2. Introduction of MOS capacitor
The MOS capacitor consists of a Metal-Oxide-Semiconductor structure as illustrated by Figure 1 Shown is the semiconductor substrate with a thin oxide layer and a top metal contact, referred to as the gate. A second metal layer forms an Ohmic contact to the back of the semiconductor and is called the bulk contact. The structure shown has a p-type substrate. We will refer to this as an n-type MOS or nMOS capacitor since the inversion layer contains electrons.
Figure 1 : The structure of MOS capacitor
To understand the different bias modes of an MOS capacitor we now consider three different bias voltages. One below the flatband voltage, VFB, a second between the flatband voltage and the threshold voltage, VT, and finally one larger than the threshold voltage. These bias regimes are
참고 자료
▶ Semiconductor Material and Device Characterization, Dieter K. Schroder, Arizona State University, John Wiley & Sons, Inc.
▶ Solid State Electronic Devices, Ben G.Streetman, Prentice Hall
