전자회로실험 A+ 12주차 결과보고서(MOSFET Characteristics)

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"전자회로실험 A+ 12주차 결과보고서(MOSFET Characteristics)"에 대한 내용입니다.

목차

1. 실험목표
2. 실험과정
3. 실험결과
4. 실험결과 사진
5. PSPICE 결과
6. PSPICE 사진
7. 분석 및 토의

본문내용

1. 실험목표
1. Familiarize with the usage of metal-oxide-semiconductor field-effect transistor (MOSFET).
2. Measure the threshold voltage (V) and the MOSFET parameter.
3. Measure the characteristics of MOSFET.
4. Compare the experimental results with the simulation results.
2. 실험과정
(1) Finding the threshold voltage VTH
1. Connect the circuit of Fig. 9.1., where R1 = 36kΩ, R2 = 3.6kΩ, R3 = 470Ω, M1 = 2N7000.

2. Connect VIN, VCC to DC power supply.
3. Find the VGS Where VGS=VDS and ID =1mA by changing VIN and VCC. The corresponding VGS is the threshold voltage of the transistor. (VGS and VDS should be within 2~2.5V range)
(2) Output Characteristic (VGS – ID)
1. Continue with the circuit from lab 9.1
2. Sweep voltage VIN from 13V~21V with a DC power supply while maintaining the VDS as 10V (change VCC to maintain VDS as 10V)
3. Measure ID of various VGS, and record in Table 9.1
4. Draw a VGS-lD graph according to the values obtained.
(3) Control Characteristic (VDS – ID)
1. Continue with the circuit from lab 9.1 and 9.2
2. Set VIN as (VTH+100mV)*11. (VTH obtained in 9.1). Record in Table 9.2

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