HEMT 발표 PPT
- 최초 등록일
- 2021.11.08
- 최종 저작일
- 2018.03
- 12페이지/ MS 파워포인트
- 가격 1,000원
목차
1. Hetero-junction
2. HEMT
본문내용
What is HEMT ?
✓ HEMT : High electron mobility transistor
✓ MODFET: modulation- doped FET
< 중 략 >
HEMT
1)Buffer layer : to make Smooth surface, good to accommodate lattice mismatch.
2)2DEG : result from the band gap difference between AlxGa1-xAs and GaAs → A sheet of nearly-free electrons
3)The spacer layer : separates the 2DEG from ionized donors generated by n+ active layer.
참고 자료
http://www.elec4.co.kr/article/articleView.asp?idx=3226
https://www.intechopen.com/books/different-types-of-field-effect-transistors-theory-and-applications/high-electron-mobility-transistors-performance-analysis-research-trend-and-applications
http://www.ee.ust.hk/~eekjchen/WANG_Ruonan_thesis.pdf
반도체 소자 공학- Neamen, Donald
반도체 소자 공학- Pierret , Robert F
HEMT 특성에 관한 해석적 모델 및 Simulation Package의 개발 -<순천향 대학교 .박광민>
GaAs HEMTs Overview & applied techniques to improve high-speed performance –PURDUE university
반도체 소자( physics and technology) –권민기 박시현 박일규
http://www.ee.sc.edu/personal/faculty/simin/ELCT871/18%20AlGAN-GaN%20HEMTs.pdf